Method of forming a patterned substantially crystalline ta2o5 comprising material, and method of forming a capacitor having a capacitor dielectric region comprising substantially crystalline ta2o5 comprising material

ABSTRACT

In part, disclosed are semiconductor processing methods, methods of depositing a tungsten comprising layer over a substrate, methods of depositing a tungsten nitride comprising layer over a substrate, methods of depositing a tungsten silicide comprising layer over a substrate, methods of forming a transistor gate line over a substrate, methods of forming a patterned substantially crystalline Ta 2 O 5  comprising material, and methods of forming a capacitor dielectric region comprising substantially crystalline Ta 2 O 5  comprising material. In one implementation, a semiconductor processing method includes forming a substantially amorphous Ta 2 O 5  comprising layer over a semiconductive substrate. The layer is exposed to WF 6  under conditions effective to etch substantially amorphous Ta 2 O 5  from the substrate. In one implementation, the layer is exposed to WF 6  under conditions effective to both etch substantially amorphous Ta 2 O 5  from the substrate and deposit a tungsten comprising layer over the substrate during the exposing.

CROSS REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.09/827,759, which was filed on Apr. 6, 2001, and which is incorporatedby reference herein.

TECHNICAL FIELD

The invention relates to semiconductor processing methods, to methods offorming DRAM circuitry, to methods of depositing a tungsten comprisinglayer over a substrate, to methods of forming a transistor gate lineover a substrate, to methods of forming a transistor gate line over asubstrate, to methods of forming a patterned substantially crystallineTa₂O₅ comprising material, and to methods of forming a capacitordielectric region comprising substantially crystalline Ta₂O₅ comprisingmaterial.

BACKGROUND OF THE INVENTION

As DRAMs increase in memory cell density, there is a continuingchallenge to maintain sufficiently high storage capacitance despitedecreasing cell area. Additionally, there is a continuing goal tofurther decrease cell area. One principal way of increasing cellcapacitance is through cell structure techniques. Such techniquesinclude three-dimensional cell capacitors, such as trenched or stackedcapacitors. Yet as feature size continues to become smaller and smaller,development of improved materials for cell dielectrics as well as thecell structure are important. The feature size of 256 Mb DRAMs andbeyond will be on the order of 0.25 micron or less, and conventionaldielectrics such as SiO₂ and Si₃N₄ might not be suitable because of lowdielectric constants.

Highly integrated memory devices are expected to require a very thindielectric film for the 3-dimensional capacitor of cylindrically stackedor trench structures. To meet this requirement, the capacitor dielectricfilm thickness will be below 2.5 nm of SiO₂ equivalent thickness.

Insulating inorganic metal oxide materials (such as ferroelectricmaterials, perovskite materials and pentoxides) are commonly referred toas “high k” materials due to their high dielectric constants, which makethem attractive as dielectric materials in capacitors, for example forhigh density DRAMs and non-volatile memories. Using such materialsenables the creation of much smaller and simpler capacitor structuresfor a given stored charge requirement, enabling the packing densitydictated by future circuit design. One such material is tantalumpentoxide.

Tungsten, in desired elemental or compound forms, is a conductivematerial finding increasing use in the fabrication of circuit devices.The semiconductor industry continues to search for new and hopefullyimproved ways of depositing or otherwise forming tungsten materials ontoa substrate.

SUMMARY

The invention comprises semiconductor processing methods, methods offorming DRAM circuitry, methods of depositing a tungsten comprisinglayer over a substrate, methods of depositing an elemental tungstencomprising layer over a substrate, methods of depositing a tungstennitride comprising layer over a substrate, methods of depositing atungsten silicide comprising layer over a substrate, methods of forminga transistor gate line over a substrate, methods of forming a patternedsubstantially crystalline Ta₂O₅ comprising material, and methods offorming a capacitor dielectric region comprising substantiallycrystalline Ta₂O₅ comprising material. In one implementation, asemiconductor processing method includes forming a substantiallyamorphous Ta₂O₅ comprising layer over a semiconductive substrate. Thelayer is exposed to WF₆ under conditions effective to etch substantiallyamorphous Ta₂O₅ from the substrate. In one implementation, the layer isexposed to WF₆ under conditions effective to both etch substantiallyamorphous Ta₂O₅ from the substrate and deposit a tungsten comprisinglayer over the substrate during the exposing. In one implementation,aspects of the invention are used to fabricate a transistor gate line.In one implementation, aspects of the invention are used to fabricateDRAM circuitry.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a diagrammatic sectional view of a semiconductor waferfragment at one processing step in accordance with an aspect of theinvention.

FIG. 2 is a view of the FIG. 1 wafer fragment at a processing stepsubsequent to that shown by FIG. 1.

FIG. 3 is a view of the FIG. 1 wafer fragment at a processing stepsubsequent to that shown by FIG. 1 and alternate to that shown by FIG.2.

FIG. 4 is a diagrammatic sectional view of an alternate embodimentsemiconductor wafer fragment at a processing step in accordance with anaspect of the invention.

FIG. 5 is a view of the FIG. 4 wafer fragment at a processing stepsubsequent to that shown by FIG. 4.

FIG. 6 is a view of the FIG. 4 wafer fragment at a processing stepsubsequent to that shown by FIG. 5.

FIG. 7 is a diagrammatic sectional view of yet another alternateembodiment semiconductor wafer fragment at a processing step inaccordance with an aspect of the invention.

FIG. 8 is a view of the FIG. 7 wafer fragment at a processing stepsubsequent to that shown by FIG. 7.

FIG. 9 is a view of the FIG. 7 wafer fragment at a processing stepsubsequent to that shown by FIG. 8.

FIG. 10 is a view of the FIG. 7 wafer fragment at a processing stepsubsequent to that shown by FIG. 9.

FIG. 11 is a diagrammatic sectional view of still another alternateembodiment semiconductor wafer fragment at a processing step inaccordance with an aspect of the invention.

FIG. 12 is a view of the FIG. 11 wafer fragment at a processing stepsubsequent to that shown by FIG. 11.

FIG. 13 is a view of the FIG. 11 wafer fragment at an alternateprocessing step to that shown by FIG. 12.

FIG. 14 is a view of the FIG. 11 wafer fragment at a processing stepsubsequent to that shown by FIG. 12.

FIG. 15 is a diagrammatic sectional view of another alternate embodimentsemiconductor wafer fragment at a processing step in accordance with anaspect of the invention.

FIG. 16 is a view of the FIG. 15 wafer fragment at a processing stepsubsequent to that shown by FIG. 15.

FIG. 17 is a view of the FIG. 15 wafer fragment at a processing stepsubsequent to that shown by FIG. 16.

FIG. 18 is a view of the FIG. 15 wafer fragment at a processing stepsubsequent to that shown by FIG. 17.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of theconstitutional purposes of the U.S. Patent Laws “to promote the progressof science and useful arts” (Article 1, Section 8).

Referring to FIG. 1, a semiconductive substrate is indicated generallywith reference numeral 10, and comprises bulk monocrystalline silicon12. In the context of this document, the term “semiconductor substrate”or “semiconductive substrate” is defined to mean any constructioncomprising semiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structure,including, but not limited to, the semiconductive substrates describedabove. Also in the context of this document, the term “layer” includesboth the singular and the plural unless otherwise indicated.

A substantially amorphous Ta₂O₅ layer 14 is formed over substrate 12.The preferred method for forming layer 14 is by chemical vapordeposition, for example, using Ta(OC₂H₅)₅ and O₂ as precursors at anexemplary susceptor temperature range from 400° C. to 550° C. and anexemplary ambient pressure from 100 mTorr to 20 Torr. Further in thepreferred embodiment, layer 14 preferably consists essentially ofsubstantially amorphous Ta₂O₅. In the context of this document,“substantially amorphous” means at least 95% amorphous phase whereas“substantially crystalline” means at least 95% crystalline phase.

Referring to FIG. 2, layer 14 has been exposed to WF₆ under conditionseffective to etch substantially amorphous Ta₂O₅ from the substrate. Inthe illustrated and preferred example, such exposing is effective toetch substantially all of the substantially amorphous Ta₂O₅ comprisinglayer from the substrate, although less than total removal is, ofcourse, contemplated. Preferred conditions comprise a temperature of atleast 350° C., and more preferably a temperature of at least 400° C.Pressure is preferably subatmospheric, with an exemplary preferred rangebeing from 5 mTorr to 10 Torr. In one preferred embodiment, the exposingcomprises an atmosphere which consists essentially of WF₆. An exemplaryflow rate in a 6-liter reactor is from 100 sccm to 500 sccm. Anexemplary etch rate at about 400° C. and 5 Torr at this flow rate isfrom about 10 to 50 Angstroms/minute. Reduction to practice under suchconditions evidenced etching of substantially amorphous Ta₂O₅ with noappreciable etching of substantially crystalline Ta₂O₅. Accordingly inthe preferred embodiment, the subject etching is “substantiallyselective” relative to any presence of crystalline Ta₂O₅ on thesubstrate which, in the context of this document, means an etch rate ofat least 3:1, with significantly greater selectivity having beenachieved (i.e., on the order of 1000:1). Carrier or other reactive ornon-reactive gasses might be utilized. Any of the processing describedherein might be conducted with or without plasma, either remotely orwithin the chamber in which the substrate is received.

Etching alone of the Ta₂O₅ layer might occur, or a combination ofetching and deposition of a material commensurate with etching. In oneembodiment, provision of hydrogen (in H₂ or other form) within thechamber during processing can result in deposition of tungsten or atungsten compound in addition to etching of amorphous Ta₂O₅. Converselyin one embodiment, absence of hydrogen (in H₂ or other form) within thechamber during processing can result in etching of amorphous Ta₂O₅without deposition of tungsten or a tungsten compound.

FIG. 3 illustrates an alternate embodiment to that depicted by FIG. 2.Here, layer 14 (FIG. 1) has been exposed to WF₆ under conditionseffective to both etch substantially amorphous Ta₂O₅ from the substrateand deposit a tungsten comprising layer 16 over the substrate during theexposing. In the illustrated and preferred embodiment, the exposing iseffective to etch substantially all of the substantially amorphous Ta₂O₅comprising layer 14 from the substrate. In one preferred embodiment,tungsten comprising layer 16 comprises elemental tungsten, and in oneembodiment preferably consists essentially of elemental tungsten. In onepreferred exemplary process for etching and forming the same, the Ta₂O₅layer is exposed to WF₆ and hydrogen, whether in certain compound,bimolecular or other form. An example process is to flow H₂ to thereactor in a same or different stream from the WF₆, with an exemplary H₂flow rate being from about 100 sccm to about 1000 sccm. A preferredmethod of providing the hydrogen to the etching reactor is by firstsubjecting the hydrogen to a remote plasma such that the hydrogen fed tothe reactor for the etching and deposition is in an activated state.Temperature and pressure conditions are otherwise preferably asdescribed above with respect to the first described embodiment.

In one preferred embodiment, tungsten comprising layer 16 comprises aconductive tungsten compound, and preferably consists essentially of aconductive tungsten compound. One example preferred material is tungstennitride. Such can be formed by exposing layer 14 to WF₆ and nitrogenunder conditions effective to both etch substantially amorphous Ta₂O₅from the substrate and deposit a tungsten nitride comprising-layer overthe substrate during the exposing. Example forms of nitrogen during theexposing include NH₃, N₂, N₂ plasma (either remote or within thechamber) and N₂H₂. Temperature and pressure are otherwise preferably asprovided above in the first described embodiment.

By way of example only, another example for layer 16 comprises tungstensilicide. One preferred technique for forming the same comprisesexposing the Ta₂O₅ layer to WF₆ and a silane under conditions effectiveto both etch substantially amorphous Ta₂O₅ from the substrate anddeposit a tungsten silicide comprising layer over the substrate duringthe exposing. By way of example only, exemplary silanes include SiH₄,disilane and dichlorosilane. Temperature and pressure conditions arepreferably as described above. For dichlorosilane, the substratetemperature is preferably at least 500° C.

In one preferred embodiment, tungsten comprising layer 16 consistsessentially of elemental tungsten, a conductive tungsten compound ormixtures thereof.

Reduction-to-practice examples showed depositing of a tungstencomprising layer in the above manner resulted in a higher depositionrate, better uniformity and better adhesion to underlying oxide materialbeneath the Ta₂O₅ than if the Ta₂O₅ was not there in the first place.Yet, the invention is in no way limited to these advantageous resultsunless specifically recited in an accompanying claim.

In but one aspect, a preferred implementation of the invention comprisesa method of forming a transistor gate line over a substrate. A preferredembodiment is described with reference to FIGS. 4-6. FIG. 4 depicts asubstrate 20 comprised of a bulk monocrystalline silicon substrate 12. Agate dielectric layer 24, for example silicon dioxide, is formed oversemiconductive substrate 12. A conductively doped semiconductivematerial 26, for example n-type doped polysilicon, is formed over, andpreferably on as shown, gate dielectric layer 24. A substantiallyamorphous Ta₂O₅ comprising layer 28 is formed over, and preferably on asshown, conductive semiconductive material 26.

Referring to FIG. 5, substantially amorphous Ta₂O₅ comprising layer 28(FIG. 4) has been exposed to WF₆ under conditions effective to bothremove substantially all of the substantially amorphous Ta₂O₅ from thesubstrate and deposit a conductive tungsten comprising layer 30 in itsplace over and in electrical connection with conductive semiconductivematerial 26. Exemplary and preferred processing is as described above.

Referring to FIG. 6 and after such exposing, at least tungstencomprising layer 30 and conductive semiconductive material 26 arepatterned into a transistor gate line 32. Preferred patterning is byphotolithography masking and etch.

In but yet another exemplary implementation, a method of DRAM circuitryfabrication is described initially with reference to FIGS. 7-10.Referring to FIG. 7, a wafer fragment 110 comprises two memory cells infabrication, with each comprising a memory cell storage capacitor 112.Capacitors 112 electrically connect with substrate diffusion regions 118through polysilicon plug regions 116. Diffusion regions 118 constitutepairs of source/drain regions for individual field effect transistors.Individual storage capacitors 112 comprise a first capacitor electrode120 in electrical connection with one of a pair of source/drain regions118 of one field effect transistor. A capacitor dielectric region 122comprising substantially amorphous Ta₂O₅, and preferably consistingessentially thereof, is received over first capacitor electrode 120 andan oxide layer 119 within which first capacitor electrodes 120 arereceived. Second capacitor cell electrode layer 124 is formed overcapacitor dielectric region 122.

Referring to FIG. 8, etching is conducted through a capacitor cellelectrode layer 124 and capacitor dielectric layer 122 over theillustrated central source/drain region 118 to which ultimate bit lineelectrical connection is desired.

Referring to FIG. 9 and after the FIG. 8 etching, exposed portions ofcapacitor dielectric layer 122 are exposed to WF₆ under conditionseffective to etch substantially amorphous Ta₂O₅ to recess capacitordielectric layer 122 relative to capacitor cell electrode layer 124.Ta₂O₅ capacitor dielectric layers can undesirably result in currentleakage to subsequent bit contacting plug material, with the subjectrecessing preferably providing better separation between a bit contactand the amorphous Ta₂O₅.

Referring to FIG. 10, an insulating layer 126 is formed over cellelectrode layer 124. Suitable patterning and etching is then conductedthrough layers 126 and 119 to provide an exposed contact for makingultimate electrical connection with the illustrated central source/draindiffusion region 118. A bit line 128 of an array of bit lines issubsequently fabricated, providing a bit contact 114 to the illustratedcentral source/drain region 118. An array of word lines 130 isfabricated to constitute gates of individual field effect transistors toenable selective gating of the capacitors relative to bit contact 114.

In still but another exemplary implementation, a method of forming apatterned substantially crystalline Ta₂O₅ comprising material isdescribed with reference to FIGS. 11-14. Referring initially to FIG. 11,an exemplary substrate 40 comprises a bulk substrate 42. A substantiallyamorphous comprising Ta₂O₅ material is formed over substrate 42.

Referring to FIG. 12, a masking layer 46 is formed over substantiallyamorphous comprising Ta₂O₅ material 44. Exemplary materials for maskinglayer 46 include photoresist deposited to exemplary thicknesses of from1,000 Angstroms to 50,000 Angstroms, and reflective materials such asmetals (i.e., Al, Cu, Pt and others) deposited to an exemplary thicknessof 100 Angstroms to 10,000 Angstroms. At least one opening 48 is formedthrough masking layer 46 in a desired pattern. A laser is applied, asdepicted by the vertical down arrows, to substantially amorphouscomprising Ta₂O₅ material 44 31 through opening 48 in masking layer 46,and thereby is provided in the desired pattern depicted by opening 48.The laser application is effective to transform substantially amorphouscomprising Ta₂O₅ material 44 into a substantially crystalline comprisingTa₂O₅ material 50 of the desired pattern. An example laser is a XeClexcimer laser. Example fluence for the energy application is preferablysomewhere from 0.1 J/cm2 to 1.0 J/cm2, with a more preferred range beingfrom 0.2 J/cm2 to 0.6 J/cm2. Pulse length is selected depending upon theenergy to be effective to achieve the desired amorphous to crystallinephase transformation.

FIG. 12 provides one preferred example of applying a laser tosubstantially amorphous comprising Ta₂O₅ material 44 in a desiredpattern at least in part by using a masking layer having one or moreopenings therein. FIG. 13 depicts an alternate example 40 a where amasking layer is not used, with the application of the laser beingtargeted to the specific area where crystalline phase transformation isdesired.

Referring to FIG. 14, substantially amorphous comprising Ta₂O₅ material44 is removed from the substrate. In the depicted embodiment,substantially all of the remaining substantially amorphous comprisingTa₂O₅ material 44 has been removed, with the preferred technique beingchemical etching. Further, most preferred is chemical etching by any ofthe above-described techniques utilizing WF₆, and particularly underconditions effective to substantially selectively etch substantiallyamorphous comprising Ta₂O₅ material from the substrate relative tosubstantially crystalline comprising Ta₂O₅ material. Further by way ofexample only, such exposing to WF₆ can be under conditions effective toboth etch substantially amorphous Ta₂O₅ from the substrate and deposit atungsten comprising layer over the substrate during the exposing.

Yet another implementation is described with references to FIGS. 15-18of a method of forming a capacitor having a capacitor dielectric regioncomprising substantially crystalline Ta₂O₅ comprising material. FIG. 15depicts a substrate 60 comprising bulk semiconductive material 62 havingan insulative or other layer 64 formed thereover. A first capacitorelectrode 66 is formed over substrate 62/64. A substantially amorphouscomprising Ta₂O₅ comprising material 68 is formed over first capacitorelectrode 66 and substrate 62/64.

Referring to FIG. 16, a laser has been applied to substantiallyamorphous comprising Ta₂O₅ material 68 at least over first capacitorelectrode 66 effective to transform substantially amorphous comprisingTa₂O₅ material received over first capacitor electrode 66 into asubstantially crystalline comprising Ta₂O₅ material 70 received overfirst capacitor electrode 66. Exemplary techniques for doing so includethose described above.

Referring to FIG. 17, and after the laser application, the substantiallycrystalline comprising Ta₂O₅ material and the substantially amorphouscomprising Ta₂O₅ material have been exposed to WF₆ under conditionseffective to substantially selectively etch substantially amorphouscomprising Ta₂O₅ material from the substrate relative to substantiallycrystalline comprising Ta₂O₅ material 70. Exemplary and preferredtechniques include those described above.

Referring to FIG. 18, a second capacitor electrode 72 is formed at leastover substantially crystalline comprising Ta₂O₅ material 70 receivedover first capacitor electrode 66. In one embodiment, the forming of thesecond capacitor electrode, might be conducted entirely after theimmediately above-described exposing.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

What is claimed is:
 1. A method of forming a patterned substantiallycrystalline Ta₂O₅ comprising material, comprising: forming asubstantially amorphous comprising Ta₂O₅ material over a substrate;applying a laser to less than all of the substantially amorphouscomprising Ta₂O₅ material in a desired pattern effective to transformthe substantially amorphous comprising Ta₂O₅ material into asubstantially crystalline comprising Ta₂O₅ material of the desiredpattern, and effective to leave some substantially amorphous comprisingTa₂O₅ over the substrate; and after the applying, removing substantiallyamorphous comprising Ta₂O₅ from the substrate.
 2. The method of claim 1wherein the applying in a desired pattern is through at least oneopening formed in a masking layer.
 3. The method of claim 1 wherein theapplying is without use of a masking layer.
 4. The method of claim 1wherein the removing comprises chemical etching.
 5. A method of forminga patterned substantially crystalline Ta₂O₅ comprising material,comprising: forming a substantially amorphous comprising Ta₂O₅ materialover a substrate; applying a laser to the substantially amorphouscomprising Ta₂O₅ material in a desired pattern effective to transformthe substantially amorphous comprising Ta₂O₅ material into asubstantially crystalline comprising Ta₂O₅ material of the desiredpattern; and after the applying, exposing the substantially crystallinecomprising Ta₂O₅ material and the substantially amorphous comprisingTa₂O₅ material to WF₆ under conditions effective to substantiallyselectively etch substantially amorphous comprising Ta₂O₅ material fromthe substrate relative to substantially crystalline comprising Ta₂O₅material.
 6. The method of claim 5 wherein the applying in a desiredpattern is through at least one opening formed in a masking layer. 7.The method of claim 5 wherein the applying is without use of a maskinglayer.
 8. The method of claim 5 wherein the exposing is substantiallyvoid of hydrogen.
 9. The method of claim 5 wherein the exposing to WF₆is under conditions effective to both etch substantially amorphous Ta₂O₅from the substrate and deposit a tungsten comprising layer over thesubstrate during the exposing.
 10. A method of forming a capacitorhaving a capacitor dielectric region comprising substantiallycrystalline Ta₂O₅ comprising material, comprising: forming a firstcapacitor electrode over a substrate; forming a substantially amorphouscomprising Ta₂O₅ material over the first capacitor electrode andsubstrate; applying a laser to the substantially amorphous comprisingTa₂O₅ material at least over the first capacitor electrode effective totransform substantially amorphous comprising Ta₂O₅ material receivedover the first capacitor electrode into a substantially crystallinecomprising Ta₂O₅ material received over the first capacitor electrode;after the applying, exposing the substantially crystalline comprisingTa₂O₅ material and the substantially amorphous comprising Ta₂O₅ materialto WF₆ under conditions effective to substantially selectively etchsubstantially amorphous comprising Ta₂O₅ material from the substraterelative to substantially crystalline comprising Ta₂O₅ material; andafter the applying, forming a second capacitor electrode at least overthe substantially crystalline comprising Ta₂O₅ material received overthe first capacitor electrode.
 11. The method of claim 10 wherein theforming of the second capacitor electrode is entirely after theexposing.
 12. The method of claim 10 wherein the forming of the secondcapacitor electrode comprises the exposing, the exposing to WF₆ beingunder conditions effective to both etch substantially amorphous Ta₂O₅from the substrate and deposit a tungsten comprising layer over thesubstrate during the exposing, the tungsten comprising layer comprisingthe second capacitor electrode.
 13. The method of claim 10 wherein theapplying in a desired pattern is through at least one opening formed ina masking layer.
 14. The method of claim 10 wherein the applying iswithout use of a masking layer.
 15. The method of claim 2 wherein themasking layer comprises photoresist.
 16. The method of claim 2 whereinthe masking layer comprises reflective metal.
 17. The method of claim 2wherein the applying a laser is with an XeCl excimer laser.
 18. Themethod of claim 2 wherein the applying a laser is with an XeCl excimerlaser at a fluence of from 0.1 J/cm2 to 1.0 J/cm2.
 19. The method ofclaim 2 wherein the removing removes substantially all exposed remainingof the substantially amorphous comprising Ta₂O₅ from the substrate. 20.The method of claim 2 wherein the removing comprises chemical etchingwhich is substantially selective to the substantially crystallinecomprising Ta₂O₅ material.
 21. The method of claim 6 wherein the maskinglayer comprises photoresist.
 22. The method of claim 6 wherein themasking layer comprises reflective metal.
 23. The method of claim 5wherein the applying a laser is with an XeCl excimer laser.
 24. Themethod of claim 5 wherein the applying a laser is with an XeCl excimerlaser at a fluence of from 0.1 J/cm2 to 1.0 J/cm2.
 25. The method ofclaim 5 wherein the exposing etches substantially all exposed remainingof the substantially amorphous comprising Ta₂O₅ from the substrate. 26.The method of claim 13 wherein the masking layer comprises photoresist.27. The method of claim 13 wherein the masking layer comprisesreflective metal.
 28. The method of claim 10 wherein the applying alaser is with an XeCl excimer laser.
 29. The method of claim 10 whereinthe applying a laser is with an XeCl excimer laser at a fluence of from1.0 J/cm2 to 1.0 J/cm2.
 30. The method of claim 10 wherein the exposingetches substantially all exposed remaining of the substantiallyamorphous comprising Ta₂O₅.